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MTP10N40 - TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system

MTP10N40_64671.PDF Datasheet

 
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page  

Maker


ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]



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Part: MTP10N40E
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  100: $5.49
1000: $5.20

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 Full text search : TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system


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